Datasheets
IRFD420PBF by:

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4

Part Details for IRFD420PBF by Vishay Intertechnologies

Results Overview of IRFD420PBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFD420PBF Information

IRFD420PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD420PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFD420PBF
Avnet Americas MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.7500
  • 5,000 $0.7380
  • 10,000 $0.7264
  • 15,000 $0.7143
  • 20,000 $0.7059
$0.7059 / $0.7500 Buy Now
DISTI # 70078896
RS Power MOSFET, N-Ch, VDSS 500V, RDS(ON) 3Ohms, ID 0.37A, HD-1,PD 1W, VGS+/-20V, Qg 24nC Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.9600
  • 25,000 $0.9100
  • 125,000 $0.8600
  • 250,000 $0.8100
$0.8100 / $0.9600 RFQ
DISTI # IRFD420PBF
TME Transistor: N-MOSFET, unipolar, 500V, 0.23A, 1W, DIP4 Min Qty: 1 2744
  • 1 $0.7180
  • 5 $0.6400
  • 25 $0.5660
  • 100 $0.5080
  • 500 $0.4740
$0.4740 / $0.7180 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 500
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # IRFD420PBF
EBV Elektronik MOSFET NCHANNEL 500V (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
LCSC 500V 370mA 310V0.22A 1W 4V HVMDIP-4 MOSFETs ROHS 98
  • 1 $1.2387
  • 10 $1.0395
  • 30 $0.9294
  • 100 $0.8057
  • 500 $0.7499
  • 1,000 $0.7242
$0.7242 / $1.2387 Buy Now
Vyrian Transistors 277
RFQ

Part Details for IRFD420PBF

IRFD420PBF CAD Models

IRFD420PBF Part Data Attributes

IRFD420PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD420PBF Vishay Intertechnologies Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code DIP
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 51 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 0.37 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD420PBF

This table gives cross-reference parts and alternative options found for IRFD420PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD420PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFD420 International Rectifier Check for Price Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD420PBF vs IRFD420
Part Number Manufacturer Composite Price Description Compare
IRFD420 Vishay Siliconix Check for Price Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 IRFD420PBF vs IRFD420

IRFD420PBF Related Parts

IRFD420PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFD420PBF is -55°C to 175°C.

  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and conditions.

  • The recommended gate drive voltage for the IRFD420PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFD420PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.

  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.

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