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Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD420PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD420PBF
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Avnet Americas | MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.7059 / $0.7500 | Buy Now |
DISTI #
70078896
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RS | Power MOSFET, N-Ch, VDSS 500V, RDS(ON) 3Ohms, ID 0.37A, HD-1,PD 1W, VGS+/-20V, Qg 24nC Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.8100 / $0.9600 | RFQ |
DISTI #
IRFD420PBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 0.23A, 1W, DIP4 Min Qty: 1 | 2744 |
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$0.4740 / $0.7180 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
DISTI #
IRFD420PBF
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EBV Elektronik | MOSFET NCHANNEL 500V (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 500V 370mA 310V0.22A 1W 4V HVMDIP-4 MOSFETs ROHS | 98 |
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$0.7242 / $1.2387 | Buy Now |
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Vyrian | Transistors | 277 |
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RFQ |
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IRFD420PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD420PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | DIP | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 51 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 0.37 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 1 W | |
Pulsed Drain Current-Max (IDM) | 3 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD420PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD420PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRFD420 | International Rectifier | Check for Price | Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 | IRFD420PBF vs IRFD420 |
The maximum operating temperature range for the IRFD420PBF is -55°C to 175°C.
To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and conditions.
The recommended gate drive voltage for the IRFD420PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRFD420PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.
Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.