Datasheets
IRFD210 by:

Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD210 by Harris Semiconductor

Results Overview of IRFD210 by Harris Semiconductor

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IRFD210 Information

IRFD210 by Harris Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD210

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRFD210-ND
DigiKey 0.6A 200V 1.500 OHM N-CHANNEL Min Qty: 270 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1014
In Stock
  • 270 $1.1100
$1.1100 Buy Now
DISTI # 87280011
Verical IRFD210 Min Qty: 281 Package Multiple: 1 Americas - 1014
  • 281 $1.3375
  • 500 $1.2040
  • 1,000 $1.1104
$1.1104 / $1.3375 Buy Now
Rochester Electronics 0.6A, 200V, 1.500 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 1014
  • 100 $1.0700
  • 500 $0.9632
  • 1,000 $0.8883
  • 10,000 $0.7919
  • 100,000 $0.6635
$0.6635 / $1.0700 Buy Now

Part Details for IRFD210

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IRFD210 Part Data Attributes

IRFD210 Harris Semiconductor
Buy Now Datasheet
Compare Parts:
IRFD210 Harris Semiconductor Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFD210 Related Parts

IRFD210 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFD210 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal resistance, voltage rating, and current handling capability. It's recommended to consult with the manufacturer or a qualified engineer to determine the SOA for a specific application.

  • To ensure the IRFD210 is properly biased, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range (typically -2V to 4V). 2) Use a suitable gate driver circuit to provide a stable voltage source. 3) Verify the drain-source voltage (Vds) is within the recommended range (typically 0V to 200V). 4) Ensure the device is operated within its recommended temperature range (-55°C to 150°C). 5) Consult the datasheet and application notes for specific biasing requirements.

  • For optimal performance and reliability, follow these PCB design guidelines: 1) Use a multi-layer PCB with a solid ground plane to reduce noise and EMI. 2) Keep the drain and source pins as close as possible to minimize inductance. 3) Use a Kelvin connection for the gate pin to reduce noise and improve switching performance. 4) Ensure proper thermal management by providing a heat sink or thermal pad. 5) Consult the datasheet and application notes for specific layout and design recommendations.

  • To protect the IRFD210 from overvoltage and overcurrent conditions, consider the following measures: 1) Use a voltage regulator or voltage limiter to prevent excessive voltage. 2) Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. 3) Add a fuse or a PTC (positive temperature coefficient) thermistor to prevent excessive current. 4) Ensure proper thermal management to prevent overheating. 5) Consult the datasheet and application notes for specific protection recommendations.

  • To ensure the reliability and performance of the IRFD210, follow these storage and handling procedures: 1) Store the devices in their original packaging or in a dry, ESD-protected environment. 2) Avoid exposing the devices to moisture, extreme temperatures, or physical stress. 3) Handle the devices by the body or the pins, avoiding touching the die or the leads. 4) Use ESD protection when handling the devices, such as wrist straps or ESD mats. 5) Consult the datasheet and manufacturer's recommendations for specific storage and handling guidelines.

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