Part Details for IRFD210 by Harris Semiconductor
Results Overview of IRFD210 by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFD210 Information
IRFD210 by Harris Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD210
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFD210-ND
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DigiKey | 0.6A 200V 1.500 OHM N-CHANNEL Min Qty: 270 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1014 In Stock |
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$1.1100 | Buy Now |
DISTI #
87280011
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Verical | IRFD210 Min Qty: 281 Package Multiple: 1 | Americas - 1014 |
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$1.1104 / $1.3375 | Buy Now |
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Rochester Electronics | 0.6A, 200V, 1.500 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1014 |
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$0.6635 / $1.0700 | Buy Now |
Part Details for IRFD210
IRFD210 CAD Models
IRFD210 Part Data Attributes
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IRFD210
Harris Semiconductor
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Datasheet
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IRFD210
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IRFD210 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFD210 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal resistance, voltage rating, and current handling capability. It's recommended to consult with the manufacturer or a qualified engineer to determine the SOA for a specific application.
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To ensure the IRFD210 is properly biased, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range (typically -2V to 4V). 2) Use a suitable gate driver circuit to provide a stable voltage source. 3) Verify the drain-source voltage (Vds) is within the recommended range (typically 0V to 200V). 4) Ensure the device is operated within its recommended temperature range (-55°C to 150°C). 5) Consult the datasheet and application notes for specific biasing requirements.
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For optimal performance and reliability, follow these PCB design guidelines: 1) Use a multi-layer PCB with a solid ground plane to reduce noise and EMI. 2) Keep the drain and source pins as close as possible to minimize inductance. 3) Use a Kelvin connection for the gate pin to reduce noise and improve switching performance. 4) Ensure proper thermal management by providing a heat sink or thermal pad. 5) Consult the datasheet and application notes for specific layout and design recommendations.
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To protect the IRFD210 from overvoltage and overcurrent conditions, consider the following measures: 1) Use a voltage regulator or voltage limiter to prevent excessive voltage. 2) Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. 3) Add a fuse or a PTC (positive temperature coefficient) thermistor to prevent excessive current. 4) Ensure proper thermal management to prevent overheating. 5) Consult the datasheet and application notes for specific protection recommendations.
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To ensure the reliability and performance of the IRFD210, follow these storage and handling procedures: 1) Store the devices in their original packaging or in a dry, ESD-protected environment. 2) Avoid exposing the devices to moisture, extreme temperatures, or physical stress. 3) Handle the devices by the body or the pins, avoiding touching the die or the leads. 4) Use ESD protection when handling the devices, such as wrist straps or ESD mats. 5) Consult the datasheet and manufacturer's recommendations for specific storage and handling guidelines.