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Part Details for IRFD123PBF by Vishay Intertechnologies
Results Overview of IRFD123PBF by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD123PBF Information
IRFD123PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD123PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K1939
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Newark | N Channel Mosfet, 100V, 1.3A, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Vishay IRFD123PBF RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.5640 | Buy Now |
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DISTI #
IRFD123PBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, HVMDIP, Through Hole - Tape and Reel (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.4704 / $0.5000 | Buy Now |
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DISTI #
31K1939
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Avnet Americas | Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, HVMDIP, Through Hole - Bulk (Alt: 31K1939) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$0.6120 / $1.1100 | Buy Now |
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DISTI #
IRFD123PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 1.3A, Idm: 10A, 1.3W, HVMDIP Min Qty: 1 | 0 |
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$0.4170 / $1.3450 | RFQ |
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DISTI #
IRFD123PBF
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EBV Elektronik | Power MOSFET N Channel 100 V 13 A 027 ohm HVMDIP Through Hole (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFD123PBF
IRFD123PBF CAD Models
IRFD123PBF Part Data Attributes
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IRFD123PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD123PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.3 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFD123PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFD123PBF is -55°C to 175°C.
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Yes, the IRFD123PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.
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The maximum drain-source voltage rating for the IRFD123PBF is 200V.
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Yes, the IRFD123PBF is suitable for high-frequency applications up to 1MHz due to its low gate charge and internal gate resistance.
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Yes, the IRFD123PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other logic-level signal.