Part Details for IRFD113PBF by Vishay Intertechnologies
Results Overview of IRFD113PBF by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD113PBF Information
IRFD113PBF by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD113PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
90T0823
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Newark | N-Channel 100-V Rohs Compliant: Yes |Vishay IRFD113PBF RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IRFD113PBF
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Avnet Americas | N-CHANNEL 100-V - Tape and Reel (Alt: IRFD113PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
V36:1790_09218523
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Arrow Electronics | Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 1726 | Americas - 88 |
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$0.8603 / $2.5063 | Buy Now |
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DISTI #
84871839
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Verical | Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 1726 | Americas - 88 |
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$0.8603 / $2.5063 | Buy Now |
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DISTI #
IRFD113PBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 800mA, Idm: 6.4A, 1W, HVMDIP Min Qty: 1 | 0 |
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$0.3200 / $0.7550 | RFQ |
Part Details for IRFD113PBF
IRFD113PBF CAD Models
IRFD113PBF Part Data Attributes
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IRFD113PBF
Vishay Intertechnologies
Buy Now
Datasheet
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IRFD113PBF
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-PDIP-T2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFD113PBF
This table gives cross-reference parts and alternative options found for IRFD113PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD113PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFD113 | Harris Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.8A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFD113PBF vs IRFD113 |
IRFD113PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFD113PBF is -55°C to 175°C.
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To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and parameters.
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Store the IRFD113PBF in a dry, cool place, away from direct sunlight, and in its original packaging or anti-static bag to prevent damage from electrostatic discharge.
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Yes, the IRFD113PBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, ensure the device is operated within its specified ratings and parameters.
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To prevent EOS damage, ensure the device is operated within its specified voltage and current ratings, use proper PCB design and layout, and implement suitable protection circuits, such as transient voltage suppressors or surge protectors.