Part Details for IRFD113 by International Rectifier
Results Overview of IRFD113 by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFD113 Information
IRFD113 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD113
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 132 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,800MA I(D),TO-250VAR | 372 |
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$1.6500 / $4.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,800MA I(D),TO-250VAR | 105 |
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$0.8445 / $1.4075 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,800MA I(D),TO-250VAR | 105 |
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$1.6000 / $3.2000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 121 |
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$1.2500 / $1.9200 | Buy Now |
Part Details for IRFD113
IRFD113 CAD Models
IRFD113 Part Data Attributes
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IRFD113
International Rectifier
Buy Now
Datasheet
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IRFD113
International Rectifier
Power Field-Effect Transistor, 0.17A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | DIP | |
| Package Description | SIMILAR TO MO-001AN, 3 PIN | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Pulsed Drain Current-Max (IDM) | 6.9 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
IRFD113 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFD113 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it's essential to follow the thermal design guidelines provided in the datasheet, including using a suitable heat sink, applying a thermal interface material, and maintaining a maximum junction temperature (Tj) of 150°C.
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The recommended gate drive voltage for the IRFD113 is between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements and recommendations.
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Yes, the IRFD113 is suitable for high-frequency switching applications up to 1 MHz, but it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation.
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To protect the IRFD113 from ESD, it's essential to follow proper handling and storage procedures, use ESD-safe materials and equipment, and implement ESD protection circuits in the design, such as adding ESD diodes or resistors to the gate and drain pins.