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Part Details for IRFD110 by Vishay Intertechnologies
Results Overview of IRFD110 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD110 Information
IRFD110 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD110
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 559 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,1A I(D),TO-250VAR | 184 |
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$0.9760 / $2.4400 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRFD110
IRFD110 CAD Models
IRFD110 Part Data Attributes
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IRFD110
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD110
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | DIP | |
| Package Description | HD-1, DIP-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFD110
This table gives cross-reference parts and alternative options found for IRFD110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFD110 | Rochester Electronics LLC | Check for Price | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | IRFD110 vs IRFD110 |
| IRFD110 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFD110 vs IRFD110 |
IRFD110 Frequently Asked Questions (FAQ)
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The IRFD110 can operate safely between -55°C to 175°C, but the maximum junction temperature (TJ) should not exceed 175°C.
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To ensure proper biasing, the gate-source voltage (VGS) should be between -2V to 7V, and the drain-source voltage (VDS) should be between 0V to 100V. Additionally, the gate current (IG) should be limited to 100mA.
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The recommended gate resistor value for the IRFD110 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
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Yes, the IRFD110 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
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To protect the IRFD110, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.