Part Details for IRFD110 by Harris Semiconductor
Results Overview of IRFD110 by Harris Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFD110 Information
IRFD110 by Harris Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD110
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFD110-ND
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DigiKey | 1A, 100V, 0.600 OHM, N-CHANNEL Min Qty: 429 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
40364 In Stock |
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$0.7000 | Buy Now |
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DISTI #
87279486
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Verical | IRFD110 Min Qty: 446 Package Multiple: 1 Date Code: 0001 | Americas - 39172 |
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$0.8421 | Buy Now |
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DISTI #
87279510
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Verical | IRFD110 Min Qty: 446 Package Multiple: 1 | Americas - 1100 |
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$0.8421 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,1A I(D),TO-250VAR | 6 |
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$3.6379 / $4.9608 | Buy Now |
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Rochester Electronics | 1A, 100V, 0.600 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 40362 |
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$0.4177 / $0.6737 | Buy Now |
Part Details for IRFD110
IRFD110 CAD Models
IRFD110 Part Data Attributes
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IRFD110
Harris Semiconductor
Buy Now
Datasheet
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IRFD110
Harris Semiconductor
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFD110 Frequently Asked Questions (FAQ)
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The IRFD110 can operate safely between -55°C to 175°C, making it suitable for high-reliability applications.
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To ensure the IRFD110 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and a gate current (Ig) of at least 10mA.
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The maximum drain-source voltage (Vds) rating for the IRFD110 is 100V, making it suitable for high-voltage applications.
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Use a voltage regulator or a zener diode to limit the voltage, and a current-limiting resistor or a fuse to prevent overcurrent. Additionally, consider using a gate-source resistor to prevent voltage spikes.
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Yes, the IRFD110 is suitable for switching applications due to its low Rds(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.