Datasheets
IRFD020 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRFD020 by Vishay Intertechnologies

Results Overview of IRFD020 by Vishay Intertechnologies

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Applications Consumer Electronics Industrial Automation Audio and Video Systems Energy and Power Systems Electronic Manufacturing Renewable Energy

IRFD020 Information

IRFD020 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFD020

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IRFD020 Part Data Attributes

IRFD020 Vishay Intertechnologies
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IRFD020 Vishay Intertechnologies Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE
Drain Current-Max (ID) 2.4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount NO

IRFD020 Related Parts

IRFD020 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the IRFD020 is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area curve can be obtained from Vishay's application notes or by contacting their technical support.

  • To ensure the IRFD020 is properly biased for linear operation, the gate-source voltage (Vgs) should be set to a value that allows the device to operate in the saturation region. A Vgs of around 4-5V is typically recommended, but this may vary depending on the specific application and operating conditions. Consult the datasheet and application notes for more information.

  • The recommended PCB layout and thermal management for the IRFD020 involve using a copper heat sink or thermal pad to dissipate heat, keeping the device away from high-impedance nodes, and minimizing the length of the drain and source leads. A good thermal design should aim to keep the junction temperature below 150°C. Consult Vishay's application notes and PCB layout guidelines for more information.

  • The IRFD020 is not optimized for high-frequency switching applications due to its relatively high gate charge and output capacitance. However, it can be used in switching applications up to a few hundred kHz with proper design and layout considerations. Consult Vishay's application notes and high-frequency design guidelines for more information.

  • To protect the IRFD020 from electrostatic discharge (ESD), handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to the circuit design.

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