Part Details for IRFBF20STRRPBF by Vishay Intertechnologies
Results Overview of IRFBF20STRRPBF by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRFBF20STRRPBF Information
IRFBF20STRRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFBF20STRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFBF20STRRPBF
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Avnet Americas | Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFBF20STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.9400 / $0.9988 | Buy Now |
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DISTI #
844-IRFBF20STRRPBF
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Mouser Electronics | MOSFETs N-Chan 900V 1.7 Amp RoHS: Compliant | 788 |
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$0.9400 / $2.4200 | Buy Now |
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DISTI #
IRFBF20STRRPBF
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EBV Elektronik | Trans MOSFET NCH 900V 17A 3Pin2Tab D2PAK TR (Alt: IRFBF20STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 644 |
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RFQ |
Part Details for IRFBF20STRRPBF
IRFBF20STRRPBF CAD Models
IRFBF20STRRPBF Part Data Attributes
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IRFBF20STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBF20STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Pulsed Drain Current-Max (IDM) | 6.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFBF20STRRPBF
This table gives cross-reference parts and alternative options found for IRFBF20STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBF20STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFBF20STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRFBF20STRRPBF vs IRFBF20STRRPBF |
| SIHFBF20S-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | IRFBF20STRRPBF vs SIHFBF20S-GE3 |
| IRFBF20S | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRFBF20STRRPBF vs IRFBF20S |
| IRFBF20STRL | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | IRFBF20STRRPBF vs IRFBF20STRL |
IRFBF20STRRPBF Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IRFBF20STRRPBF is a standard TO-220AB footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 6.5mm x 6.5mm.
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Yes, the IRFBF20STRRPBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductance and capacitance.
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To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 10°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K between the device and heat sink. Also, ensure good airflow around the heat sink.
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The maximum allowed voltage transient for the IRFBF20STRRPBF is 30 V for a duration of ≤ 100 ns, but it's recommended to limit transients to ≤ 20 V to ensure device reliability.
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Yes, you can use multiple IRFBF20STRRPBF devices in parallel to increase current handling, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.