Part Details for IRFB9N60APBF by Vishay Intertechnologies
Results Overview of IRFB9N60APBF by Vishay Intertechnologies
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFB9N60APBF Information
IRFB9N60APBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB9N60APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
8648808
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Farnell | MOSFET, N, 600V, 9.2A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Each | 776 |
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$1.3659 / $3.2092 | Buy Now |
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DISTI #
IRFB9N60APBF
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Avnet Americas | Power MOSFET, N Channel, 600 V, 9.2 A, 0.75 ohm, TO-220AB, Through Hole - Bulk (Alt: IRFB9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$1.1682 / $1.2412 | Buy Now |
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DISTI #
IRFB9N60APBF
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Avnet Americas | Power MOSFET, N Channel, 600 V, 9.2 A, 0.75 ohm, TO-220AB, Through Hole - Bulk (Alt: IRFB9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
844-IRFB9N60APBF
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Mouser Electronics | MOSFETs TO220 600V 9.2A N-CH MOSFET RoHS: Compliant | 1416 |
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$1.2400 / $2.7300 | Buy Now |
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DISTI #
E02:0323_00021153
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Arrow Electronics | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2423 | Europe - 990 |
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$0.9967 / $1.7321 | Buy Now |
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DISTI #
V99:2348_09218678
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Arrow Electronics | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2224 | Americas - 97 |
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$0.8455 / $1.2772 | Buy Now |
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DISTI #
70078882
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RS | MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.75Ohm, ID 9.2A, TO-220AB, PD 170W, VGS +/-30V Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$2.4000 / $2.8300 | RFQ |
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Future Electronics | Single N-Channel 500 V 0.75 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Container: Tube | 1000Tube |
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$1.1500 / $1.2300 | Buy Now |
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Future Electronics | Single N-Channel 500 V 0.75 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 8 Weeks Container: Tube | 0Tube |
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$1.1500 / $1.2100 | Buy Now |
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DISTI #
84439410
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Verical | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2423 | Americas - 987 |
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$1.0109 / $1.7569 | Buy Now |
Part Details for IRFB9N60APBF
IRFB9N60APBF CAD Models
IRFB9N60APBF Part Data Attributes
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IRFB9N60APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFB9N60APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.2 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB9N60APBF
This table gives cross-reference parts and alternative options found for IRFB9N60APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB9N60APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFB9N60A | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRFB9N60APBF vs IRFB9N60A |
| IRFB9N60APBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRFB9N60APBF vs IRFB9N60APBF |
IRFB9N60APBF Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFB9N60APBF is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA boundaries to ensure reliable operation.
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To ensure the IRFB9N60APBF is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended to prevent oscillations.
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The maximum allowed Vds during switching is not explicitly stated in the datasheet. However, as a general rule, it's recommended to keep Vds below the maximum rated voltage (600V) to prevent avalanche breakdown and ensure reliable operation.
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To handle thermal management, ensure good thermal contact between the MOSFET and a heat sink, and use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. The maximum junction temperature (Tj) is 175°C, so ensure the device operates below this temperature to prevent thermal runaway.
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For optimal performance, use a PCB layout that minimizes the drain-source loop inductance and ensures good thermal conductivity. Place the MOSFET close to the heat sink, and use a solid copper plane for the drain and source connections. Avoid using vias under the MOSFET, and keep the gate trace as short as possible.