Part Details for IRFB52N15DPBF by International Rectifier
Results Overview of IRFB52N15DPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFB52N15DPBF Information
IRFB52N15DPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB52N15DPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 450 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 51A I(D), 150V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 360 |
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$2.6085 / $4.2300 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 51A I(D), 150V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 18 |
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$1.9075 / $3.0520 | Buy Now |
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Vyrian | Transistors | 7521 |
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RFQ |
Part Details for IRFB52N15DPBF
IRFB52N15DPBF CAD Models
IRFB52N15DPBF Part Data Attributes
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IRFB52N15DPBF
International Rectifier
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Datasheet
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IRFB52N15DPBF
International Rectifier
Power Field-Effect Transistor, 51A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 51 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFB52N15DPBF Frequently Asked Questions (FAQ)
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The SOA for the IRFB52N15DPBF is not explicitly stated in the datasheet, but it can be estimated using the device's thermal resistance, maximum junction temperature, and voltage ratings. A general guideline is to limit the device's operation to a maximum of 50% of its maximum voltage rating (150V) and 50% of its maximum current rating (52A) simultaneously.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K. Additionally, ensure good airflow around the heat sink to prevent thermal hotspots.
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The recommended gate drive voltage for the IRFB52N15DPBF is between 10V and 15V, with a current limit of 1A to 2A. A gate drive voltage of 12V is a common choice. The gate drive current should be limited to prevent excessive power dissipation in the gate driver.
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To protect the IRFB52N15DPBF from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the device is stored in an ESD-safe environment, and use ESD-protected packaging during transportation and storage.
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A good PCB layout for the IRFB52N15DPBF should minimize the power loop inductance and ensure a low-impedance path for the drain and source connections. Use a 2-ounce copper PCB with a minimum of 1 oz copper for the power traces. Keep the gate drive traces short and away from the power traces to minimize noise coupling.