Part Details for IRFB4410ZGPBF by International Rectifier
Results Overview of IRFB4410ZGPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IRFB4410ZGPBF Information
IRFB4410ZGPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB4410ZGPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 730 |
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$0.8359 / $1.3500 | Buy Now |
Part Details for IRFB4410ZGPBF
IRFB4410ZGPBF CAD Models
IRFB4410ZGPBF Part Data Attributes
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IRFB4410ZGPBF
International Rectifier
Buy Now
Datasheet
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IRFB4410ZGPBF
International Rectifier
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 242 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 97 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 390 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFB4410ZGPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IRFB4410ZGPBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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The thermal resistance of the IRFB4410ZGPBF can be calculated using the junction-to-case thermal resistance (RθJC) and the case-to-ambient thermal resistance (RθCA). The RθJC is specified in the datasheet as 0.5°C/W, and the RθCA depends on the specific heat sink and cooling system used. You can use the following formula: RθJA = RθJC + RθCA.
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The recommended gate drive voltage for the IRFB4410ZGPBF is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the IRFB4410ZGPBF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. You may need to use additional components, such as snubbers or gate drive resistors, to ensure reliable operation.
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To protect the IRFB4410ZGPBF from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. For example, you can use a voltage regulator to limit the voltage across the device, and a current sensor to detect overcurrent conditions. You can also use a protection circuit, such as a crowbar circuit, to rapidly disconnect the device from the power source in case of an overvoltage or overcurrent event.