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Part Details for IRFB4227PBF by Infineon Technologies AG
Results Overview of IRFB4227PBF by Infineon Technologies AG
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFB4227PBF Information
IRFB4227PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB4227PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
66K6432
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Newark | Mosfet, 200V, 65A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:65A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFB4227PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 5934 |
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$1.5100 / $3.4900 | Buy Now |
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DISTI #
448-IRFB4227PBF-ND
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DigiKey | MOSFET N-CH 200V 65A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3046 In Stock |
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$1.4635 / $3.0500 | Buy Now |
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DISTI #
IRFB4227PBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 65 A, 24 mOhm, TO-220AB, 3 Pins, Through Hole - Rail/Tube (Alt: IRFB4227PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 149 |
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$0.6432 / $0.6713 | Buy Now |
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DISTI #
66K6432
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Avnet Americas | Power MOSFET, N Channel, 200 V, 65 A, 24 mOhm, TO-220AB, 3 Pins, Through Hole - Bulk (Alt: 66K6432) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1819 Partner Stock |
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$1.9200 / $3.6300 | Buy Now |
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DISTI #
E02:0323_00176145
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Arrow Electronics | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2509 | Europe - 116274 |
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$0.6869 / $1.3968 | Buy Now |
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DISTI #
V79:2366_30299614
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Arrow Electronics | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2302 | Americas - 12388 |
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$1.2090 / $2.0560 | Buy Now |
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DISTI #
V36:1790_16260937
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Arrow Electronics | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2302 | Americas - 735 |
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$0.7442 | Buy Now |
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Future Electronics | Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 58500Tube |
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$0.6350 / $0.7000 | Buy Now |
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Future Electronics | Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$0.6350 / $0.7200 | Buy Now |
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DISTI #
8327687
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Verical | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 10 Package Multiple: 1 | Americas - 116274 |
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$0.6957 / $1.3551 | Buy Now |
Part Details for IRFB4227PBF
IRFB4227PBF CAD Models
IRFB4227PBF Part Data Attributes
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IRFB4227PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4227PBF
Infineon Technologies AG
Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB4227PBF
This table gives cross-reference parts and alternative options found for IRFB4227PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4227PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFB4233PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 56A I(D), 230V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRFB4227PBF vs IRFB4233PBF |
| IRFB4227PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRFB4227PBF vs IRFB4227PBF |
IRFB4227PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFB4227PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRFB4227PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRFB4227PBF is suitable for high-frequency switching applications up to 100 kHz, but ensure proper thermal management and follow the recommended gate drive voltage.
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Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator.