Part Details for IRFB31N20DPBF by Infineon Technologies AG
Results Overview of IRFB31N20DPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFB31N20DPBF Information
IRFB31N20DPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB31N20DPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001560192
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EBV Elektronik | Trans MOSFET NCH 200V 31A 3Pin3Tab TO220AB (Alt: SP001560192) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 200V 31A TO-220AB | 7790 |
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$1.8288 / $2.3621 | Buy Now |
Part Details for IRFB31N20DPBF
IRFB31N20DPBF CAD Models
IRFB31N20DPBF Part Data Attributes
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IRFB31N20DPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFB31N20DPBF
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1999-11-29 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFB31N20DPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IRFB31N20DPBF is 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The maximum current rating of the IRFB31N20DPBF is 31A, but this is dependent on the PCB design, thermal management, and cooling system used.
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Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage, and follow proper ESD handling procedures to prevent damage during handling and assembly.
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The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω to limit the gate current and prevent oscillations.