Part Details for IRFB17N50LPBF by Vishay Intertechnologies
Results Overview of IRFB17N50LPBF by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFB17N50LPBF Information
IRFB17N50LPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB17N50LPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6708
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Newark | N Channel Mosfet, 500V, 16A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:16A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Vishay IRFB17N50LPBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
87211680
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Verical | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2437 | Americas - 2950 |
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$2.6161 / $3.5144 | Buy Now |
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DISTI #
IRFB17N50LPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 11A, 220W, TO220AB Min Qty: 1 | 330 |
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$1.9700 / $4.9200 | Buy Now |
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DISTI #
IRFB17N50LPBF
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EBV Elektronik | MOSFET NCHANNEL 500V (Alt: IRFB17N50LPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 700 |
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Buy Now | |
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New Advantage Corporation | Hexfet (IR) RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 600 |
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$1.5300 / $1.6400 | Buy Now |
Part Details for IRFB17N50LPBF
IRFB17N50LPBF CAD Models
IRFB17N50LPBF Part Data Attributes
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IRFB17N50LPBF
Vishay Intertechnologies
Buy Now
Datasheet
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IRFB17N50LPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 390 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 220 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFB17N50LPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IRFB17N50LPBF is 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The maximum current rating of the IRFB17N50LPBF is 17A, but this is dependent on the operating conditions and heat sink used.
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To prevent the MOSFET from overheating, ensure proper heat sinking, use a sufficient thermal interface material, and keep the junction temperature (Tj) below the maximum rating of 175°C.
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The recommended gate resistor value for the IRFB17N50LPBF is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.