Part Details for IRF9Z34NSTRRPBF by Infineon Technologies AG
Results Overview of IRF9Z34NSTRRPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF9Z34NSTRRPBF Information
IRF9Z34NSTRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z34NSTRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85994952
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Verical | Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 455 Package Multiple: 1 Date Code: 2201 | Americas - 119000 |
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$0.8244 | Buy Now |
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Bristol Electronics | 3469 |
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RFQ | ||
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Rochester Electronics | 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 119000 |
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$0.4089 / $0.6595 | Buy Now |
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DISTI #
SP001551716
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EBV Elektronik | Trans MOSFET PCH 55V 19A 3Pin2Tab D2PAK TR (Alt: SP001551716) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 55V 19A D2PAK | 65720 |
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$0.1695 / $0.2188 | Buy Now |
Part Details for IRF9Z34NSTRRPBF
IRF9Z34NSTRRPBF CAD Models
IRF9Z34NSTRRPBF Part Data Attributes
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IRF9Z34NSTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9Z34NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Date Of Intro | 1997-08-25 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34NSTRRPBF
This table gives cross-reference parts and alternative options found for IRF9Z34NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z34NSTRLPBF | Infineon Technologies AG | $0.6813 | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSTRLPBF |
| IRF9Z34NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSPBF |
| IRF9Z34NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSTRL |
| IRF9Z34NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSPBF |
| IRF9Z34NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSTRR |
| IRF9Z34NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NS |
| IRF9Z34NSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRRPBF vs IRF9Z34NSTRLPBF |
IRF9Z34NSTRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9Z34NSTRRPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its recommended operating temperature range.
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The recommended gate drive voltage for the IRF9Z34NSTRRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF9Z34NSTRRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
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The maximum allowable power dissipation for the IRF9Z34NSTRRPBF is 130W, but this value can be derated based on the device's operating temperature and other factors.