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Part Details for IRF9Z34NSTRLPBF by Infineon Technologies AG
Results Overview of IRF9Z34NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF9Z34NSTRLPBF Information
IRF9Z34NSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z34NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9219
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Newark | Mosfet, P-Ch, 55V, 19A, To-263, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Qualification:-Rohs Compliant: Yes |Infineon IRF9Z34NSTRLPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1995 |
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$0.6000 / $0.7090 | Buy Now |
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DISTI #
86AK5394
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Newark | Mosfet, P-Ch, 55V, 19A, To-263 Rohs Compliant: Yes |Infineon IRF9Z34NSTRLPBF RoHS: Compliant Min Qty: 1600 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5650 / $0.6100 | Buy Now |
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DISTI #
IRF9Z34NSTRLPBFCT-ND
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DigiKey | MOSFET P-CH 55V 19A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4506 In Stock |
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$0.4693 / $1.4500 | Buy Now |
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DISTI #
IRF9Z34NSTRLPBF
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Avnet Americas | Power MOSFET, P Channel, 55 V, 19 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRF9Z34NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.3792 / $0.4116 | Buy Now |
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DISTI #
13AC9219
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Avnet Americas | Power MOSFET, P Channel, 55 V, 19 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 13AC9219) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 0 |
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$0.8440 / $1.3300 | Buy Now |
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DISTI #
942-IRF9Z34NSTRLPBF
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Mouser Electronics | MOSFETs MOSFT PCh -55V 19A 100mOhm 23.3nC RoHS: Compliant | 6632 |
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$0.4690 / $1.3500 | Buy Now |
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DISTI #
V72:2272_13889939
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Arrow Electronics | Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2307 Container: Cut Strips | Americas - 3 |
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$0.4675 | Buy Now |
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DISTI #
88790981
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Verical | Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1600 Package Multiple: 1600 Date Code: 2342 | Americas - 12800 |
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$0.5036 | Buy Now |
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DISTI #
62496469
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Verical | Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 61 Package Multiple: 1 Date Code: 2230 | Americas - 1910 |
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$0.6570 / $1.4300 | Buy Now |
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Bristol Electronics | 299 |
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RFQ |
Part Details for IRF9Z34NSTRLPBF
IRF9Z34NSTRLPBF CAD Models
IRF9Z34NSTRLPBF Part Data Attributes
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IRF9Z34NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9Z34NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF9Z34NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z34NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSTRL |
| IRF9Z34NSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSTRLPBF |
| IRF9Z34NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NS |
| IRF9Z34NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NS |
| IRF9Z34NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSTRRPBF |
| IRF9Z34NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSTRR |
| IRF9Z34NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSPBF |
| IRF9Z34NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z34NSTRLPBF vs IRF9Z34NSPBF |
IRF9Z34NSTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9Z34NSTRLPBF is -55°C to 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The maximum current rating for the IRF9Z34NSTRLPBF is 34A, but this is dependent on the PCB design, thermal management, and cooling system.
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To prevent overheating and thermal runaway, ensure proper thermal management, such as using a heat sink, and monitor the junction temperature (Tj) to stay within the recommended operating range.
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The recommended gate resistor value for the IRF9Z34NSTRLPBF is typically in the range of 10Ω to 100Ω, but this may vary depending on the specific application and PCB design.