Part Details for IRF9Z24PBF by Vishay Siliconix
Results Overview of IRF9Z24PBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRF9Z24PBF Information
IRF9Z24PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z24PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9Z24PBF-ND
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DigiKey | MOSFET P-CH 60V 11A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
4784 In Stock |
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$0.7863 / $1.7300 | Buy Now |
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New Advantage Corporation | Single P-Channel 60 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 350 |
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$1.0000 / $1.0800 | Buy Now |
Part Details for IRF9Z24PBF
IRF9Z24PBF CAD Models
IRF9Z24PBF Part Data Attributes
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IRF9Z24PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF9Z24PBF
Vishay Siliconix
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z24PBF
This table gives cross-reference parts and alternative options found for IRF9Z24PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z24PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z24PBF | Vishay Intertechnologies | $0.9842 | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IRF9Z24PBF vs IRF9Z24PBF |
| IRF9Z24 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF9Z24PBF vs IRF9Z24 |
| IRF9Z24 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF9Z24PBF vs IRF9Z24 |
| IRF9Z24 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF9Z24PBF vs IRF9Z24 |
| IRF9Z24PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF9Z24PBF vs IRF9Z24PBF |
| IRF9Z24 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF9Z24PBF vs IRF9Z24 |
| IRF9Z24 | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF9Z24PBF vs IRF9Z24 |
IRF9Z24PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9Z24PBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRF9Z24PBF is 200V.
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Yes, the IRF9Z24PBF is suitable for switching regulator applications due to its low RDS(on) and high switching speed.
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Use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or current limiter, to protect the IRF9Z24PBF from overvoltage and overcurrent conditions.