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Part Details for IRF9Z24NSTRLPBF by Infineon Technologies AG
Results Overview of IRF9Z24NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRF9Z24NSTRLPBF Information
IRF9Z24NSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z24NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64AH3716
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Newark | Mosfet, P-Ch, -55V, -12A, 175Deg C, 45W, Transistor Polarity:P Channel, Continuous Drain Current Id:-12A, Drain Source Voltage Vds:-55V, On Resistance Rds(On):0.175Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Infineon IRF9Z24NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
70018983
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RS | IRF9Z24NSTRLPBF P-channel MOSFET Transistor, 12 A, 55 V, 3+Tab-Pin D2PAK Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.0800 / $1.3300 | RFQ |
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DISTI #
SP001554552
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EBV Elektronik | Trans MOSFET PCH 55V 12A 3Pin2Tab D2PAK TR (Alt: SP001554552) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 55V 12A D2PAK | 12450 |
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$0.9489 / $1.4232 | Buy Now |
Part Details for IRF9Z24NSTRLPBF
IRF9Z24NSTRLPBF CAD Models
IRF9Z24NSTRLPBF Part Data Attributes
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IRF9Z24NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF9Z24NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 92 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 3.8 W | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z24NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF9Z24NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z24NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z24NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z24NSTRLPBF vs IRF9Z24NS |
| IRF9Z24NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSTRLPBF vs IRF9Z24NSPBF |
| IRF9Z24NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSTRLPBF vs IRF9Z24NSTRRPBF |
| IRF9Z24NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSTRLPBF vs IRF9Z24NSPBF |
| IRF9Z24NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z24NSTRLPBF vs IRF9Z24NSTRR |
IRF9Z24NSTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9Z24NSTRLPBF is -55°C to 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The maximum current rating for the IRF9Z24NSTRLPBF is 24A, but this can be affected by the PCB design, thermal management, and other factors.
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To prevent overheating, ensure good thermal management by using a heat sink, thermal interface material, and a well-designed PCB with adequate copper areas for heat dissipation.
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The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω to limit the gate current and prevent oscillations.