Part Details for IRF9Z24NSPBF by International Rectifier
Results Overview of IRF9Z24NSPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRF9Z24NSPBF Information
IRF9Z24NSPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z24NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 89 |
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$1.3440 / $2.6880 | Buy Now |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 71 |
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$1.8000 / $3.6000 | Buy Now | |
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Rochester Electronics | 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 26 |
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$0.4515 / $0.7282 | Buy Now |
Part Details for IRF9Z24NSPBF
IRF9Z24NSPBF CAD Models
IRF9Z24NSPBF Part Data Attributes
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IRF9Z24NSPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF9Z24NSPBF
International Rectifier
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z24NSPBF
This table gives cross-reference parts and alternative options found for IRF9Z24NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z24NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z24NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z24NSPBF vs IRF9Z24NS |
| IRF9Z24NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSPBF vs IRF9Z24NSPBF |
| IRF9Z24NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSPBF vs IRF9Z24NSTRRPBF |
| IRF9Z24NSTRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NSPBF vs IRF9Z24NSTRLPBF |
| IRF9Z24NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z24NSPBF vs IRF9Z24NSTRR |
IRF9Z24NSPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9Z24NSPBF is -55°C to 175°C.
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The IRF9Z24NSPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum gate-source voltage (Vgs) for the IRF9Z24NSPBF is ±20V.
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Yes, the IRF9Z24NSPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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Yes, the IRF9Z24NSPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.