Part Details for IRF9Z24NS by Infineon Technologies AG
Results Overview of IRF9Z24NS by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRF9Z24NS Information
IRF9Z24NS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9Z24NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) | MOSFET P-CH 55V 12A D2PAK | 13722 |
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$0.9489 / $1.4232 | Buy Now |
Part Details for IRF9Z24NS
IRF9Z24NS CAD Models
IRF9Z24NS Part Data Attributes
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IRF9Z24NS
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9Z24NS
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | PLASTIC, D2PAK-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z24NS
This table gives cross-reference parts and alternative options found for IRF9Z24NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z24NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9Z24NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NS vs IRF9Z24NSPBF |
| IRF9Z24NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NS vs IRF9Z24NSTRRPBF |
| IRF9Z24NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NS vs IRF9Z24NSPBF |
| IRF9Z24NSTRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF9Z24NS vs IRF9Z24NSTRLPBF |
| IRF9Z24NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF9Z24NS vs IRF9Z24NSTRR |
IRF9Z24NS Frequently Asked Questions (FAQ)
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The maximum junction temperature that the IRF9Z24NS can withstand is 175°C. This is a critical parameter to ensure the device operates within its specified limits and to prevent thermal runaway.
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To ensure proper cooling, it is recommended to use a heat sink with a thermal resistance of less than 10°C/W. Additionally, the device should be mounted on a PCB with a good thermal conductivity, and the surrounding air should be able to circulate freely to dissipate heat.
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The recommended gate drive voltage for the IRF9Z24NS is between 10V and 15V. This ensures that the device is fully enhanced and minimizes switching losses.
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Yes, the IRF9Z24NS is suitable for high-frequency switching applications up to 1 MHz. However, it is essential to consider the device's switching losses, gate charge, and thermal performance when designing the application.
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To protect the IRF9Z24NS from overvoltage and overcurrent, it is recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.