Part Details for IRF9953PBF by International Rectifier
Results Overview of IRF9953PBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF9953PBF Information
IRF9953PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9953PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 508 |
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RFQ |
Part Details for IRF9953PBF
IRF9953PBF CAD Models
IRF9953PBF Part Data Attributes
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IRF9953PBF
International Rectifier
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Datasheet
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IRF9953PBF
International Rectifier
Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9953PBF
This table gives cross-reference parts and alternative options found for IRF9953PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9953PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9953TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF9953PBF vs IRF9953TR |
| IRF9953 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF9953PBF vs IRF9953 |
| IRF9953 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF9953PBF vs IRF9953 |
IRF9953PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9953PBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
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To calculate the power dissipation of the IRF9953PBF, you need to consider the drain-source on-resistance (RDS(on)), the drain current (ID), and the voltage drop across the device. The power dissipation can be calculated using the formula: Pd = RDS(on) x ID^2 + Vds x ID, where Vds is the voltage drop across the device.
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The recommended gate drive voltage for the IRF9953PBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the switching losses, but may also increase the gate charge and reduce the reliability of the device.
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To ensure the IRF9953PBF is properly biased for linear operation, you need to ensure that the gate-source voltage (Vgs) is within the recommended range, typically between 2V to 4V. You should also ensure that the drain-source voltage (Vds) is within the recommended range, typically between 1V to 10V, and that the drain current (ID) is within the recommended range, typically up to 20A.
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The IRF9953PBF has a high power density, which requires proper thermal management to ensure reliable operation. You should consider using a heat sink with a thermal interface material, and ensure good airflow around the device. You should also consider the thermal resistance of the PCB and the thermal interface material, and ensure that the device is operated within the recommended temperature range.