Part Details for IRF9953PBF by Infineon Technologies AG
Results Overview of IRF9953PBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF9953PBF Information
IRF9953PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9953PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9953PBF-ND
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DigiKey | MOSFET 2P-CH 30V 2.3A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Part Details for IRF9953PBF
IRF9953PBF CAD Models
IRF9953PBF Part Data Attributes
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IRF9953PBF
Infineon Technologies AG
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Datasheet
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IRF9953PBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9953PBF
This table gives cross-reference parts and alternative options found for IRF9953PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9953PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9953 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF9953PBF vs IRF9953 |
IRF9953PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9953PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF9953PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF9953PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.