Datasheets
IRF9630SPBF by:

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRF9630SPBF by Vishay Siliconix

Results Overview of IRF9630SPBF by Vishay Siliconix

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IRF9630SPBF Information

IRF9630SPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9630SPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF9630SPBF-ND
DigiKey MOSFET P-CH 200V 6.5A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube 3367
In Stock
  • 1 $2.9800
  • 50 $1.2600
  • 100 $1.1738
$1.1738 / $2.9800 Buy Now
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant Stock DE - 200
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF9630SPBF

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IRF9630SPBF Part Data Attributes

IRF9630SPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF9630SPBF Vishay Siliconix Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 26 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9630SPBF

This table gives cross-reference parts and alternative options found for IRF9630SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9630SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9530S Vishay Siliconix Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 IRF9630SPBF vs IRF9530S
IRF9530STRL International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9630SPBF vs IRF9530STRL

IRF9630SPBF Related Parts

IRF9630SPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9630SPBF is -55°C to 175°C.

  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.

  • The maximum allowable voltage for the IRF9630SPBF is 200V.

  • Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.

  • The recommended gate drive voltage for the IRF9630SPBF is 10V to 15V.

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