Part Details for IRF9620 by Harris Semiconductor
Results Overview of IRF9620 by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
IRF9620 Information
IRF9620 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9620
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 3.5A, 200V, 1.5OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB | 8993 |
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$0.3780 / $1.0800 | Buy Now |
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Quest Components | 3.5A, 200V, 1.5OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB | 100 |
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$1.2100 / $2.2000 | Buy Now |
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Quest Components | 3.5A, 200V, 1.5OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB | 44 |
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$0.9625 / $1.9250 | Buy Now |
Part Details for IRF9620
IRF9620 CAD Models
IRF9620 Part Data Attributes
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IRF9620
Harris Semiconductor
Buy Now
Datasheet
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IRF9620
Harris Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 195 ns | |
| Turn-on Time-Max (ton) | 150 ns |
IRF9620 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF9620 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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Thermal management is critical for the IRF9620, as excessive heat can reduce the device's lifespan. Ensure good heat dissipation by using a heat sink with a thermal resistance of less than 1°C/W, and maintain a maximum junction temperature (Tj) of 150°C. You can also use thermal interface materials and follow proper PCB design guidelines to minimize thermal resistance.
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The recommended gate drive voltage for the IRF9620 is between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum Vgs rating to avoid damage to the device.
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Yes, the IRF9620 is suitable for high-frequency switching applications up to 1 MHz. However, be aware of the device's switching losses, which can increase with frequency. Ensure proper PCB design, layout, and component selection to minimize parasitic inductances and capacitances that can affect high-frequency performance.
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The IRF9620 is sensitive to electrostatic discharge (ESD). To protect the device, follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment. You can also add ESD protection components, such as TVS diodes or ESD protection arrays, to your circuit design.