Part Details for IRF9540NSPBF by Infineon Technologies AG
Results Overview of IRF9540NSPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF9540NSPBF Information
IRF9540NSPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9540NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9540NSPBF-ND
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DigiKey | MOSFET P-CH 100V 23A D2PAK Lead time: 52 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70017195
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RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.117Ohm, ID -23A, D2Pak, PD 140W, VGS +/-20V Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.2600 / $1.4900 | RFQ |
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DISTI #
SP001570626
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EBV Elektronik | Trans MOSFET PCH 100V 23A 3Pin2Tab D2PAK (Alt: SP001570626) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 100V 23A D2PAK | 87520 |
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$0.3250 / $0.4197 | Buy Now |
Part Details for IRF9540NSPBF
IRF9540NSPBF CAD Models
IRF9540NSPBF Part Data Attributes
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IRF9540NSPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9540NSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, D2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 84 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.117 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9540NSPBF
This table gives cross-reference parts and alternative options found for IRF9540NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9540NSTRLPBF | Infineon Technologies AG | $0.8423 | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF9540NSPBF vs IRF9540NSTRLPBF |
| IRF9540NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF9540NSPBF vs IRF9540NSTRL |
| IRF9540NSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF9540NSPBF vs IRF9540NSTRLPBF |
| IRF9540NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF9540NSPBF vs IRF9540NSTRRPBF |
| IRF9540NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF9540NSPBF vs IRF9540NSPBF |
| IRF9540NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF9540NSPBF vs IRF9540NSTRR |
| IRF9540NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF9540NSPBF vs IRF9540NS |
| IRF9540NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF9540NSPBF vs IRF9540NS |
IRF9540NSPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9540NSPBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The recommended gate drive voltage for the IRF9540NSPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF9540NSPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize switching losses.
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Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator.