Datasheets
IRF9510S by:

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IRF9510S by International Rectifier

Results Overview of IRF9510S by International Rectifier

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IRF9510S Information

IRF9510S by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9510S

Part # Distributor Description Stock Price Buy
Bristol Electronics   180
RFQ
Quest Components 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 144
  • 1 $3.9200
  • 32 $2.1560
  • 71 $1.9600
$1.9600 / $3.9200 Buy Now

Part Details for IRF9510S

IRF9510S CAD Models

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IRF9510S Part Data Attributes

IRF9510S International Rectifier
Buy Now Datasheet
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IRF9510S International Rectifier Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 43 W
Power Dissipation-Max (Abs) 43 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9510S

This table gives cross-reference parts and alternative options found for IRF9510S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIHF9510S-E3 Vishay Siliconix Check for Price TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power IRF9510S vs SIHF9510S-E3
IRF9510STRL Vishay Siliconix Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 IRF9510S vs IRF9510STRL
Part Number Manufacturer Composite Price Description Compare
IRF9510STRL International Rectifier Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510STRL
IRF9510SPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 IRF9510S vs IRF9510SPBF
IRF9510SPBF Vishay Intertechnologies $0.1907 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510SPBF
IRF9510STRL Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510STRL
IRF9510STRLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 IRF9510S vs IRF9510STRLPBF
IRF9510STRLPBF Vishay Intertechnologies $1.2661 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510STRLPBF
IRF9510STRR International Rectifier Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510STRR
FQD5P10 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRF9510S vs FQD5P10
FQD5P10TF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRF9510S vs FQD5P10TF
IRF9510STRRPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9510S vs IRF9510STRRPBF

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