Datasheets
IRF9510PBF by:

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for IRF9510PBF by Vishay Siliconix

Results Overview of IRF9510PBF by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRF9510PBF Information

IRF9510PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9510PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF9510PBF-ND
DigiKey MOSFET P-CH 100V 4A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube 1147
In Stock
  • 1 $0.8800
  • 50 $0.6988
$0.6988 / $0.8800 Buy Now
DISTI # 70459418
RS MOSFET P-CH 100V 4A TO-220AB Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $1.3000
  • 10,000 $1.2300
  • 50,000 $1.1700
  • 100,000 $1.1000
$1.1000 / $1.3000 RFQ
New Advantage Corporation Single P-Channel 100 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 50 90900
  • 400 $0.4500
  • 90,900 $0.4154
$0.4154 / $0.4500 Buy Now
Vyrian Transistors 9834
RFQ

Part Details for IRF9510PBF

IRF9510PBF CAD Models

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IRF9510PBF Part Data Attributes

IRF9510PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF9510PBF Vishay Siliconix Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9510PBF

This table gives cross-reference parts and alternative options found for IRF9510PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9510 Intersil Corporation Check for Price 3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF9510PBF vs IRF9510
Part Number Manufacturer Composite Price Description Compare
IRF9510 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF9510PBF vs IRF9510
IRF9510 Harris Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF9510PBF vs IRF9510
IRF9510 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF9510PBF vs IRF9510
IRF9510 Vishay Siliconix Check for Price Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF9510PBF vs IRF9510
IRF9510 Rochester Electronics LLC Check for Price 3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF9510PBF vs IRF9510
IRF9510 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF9510PBF vs IRF9510

IRF9510PBF Related Parts

IRF9510PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9510PBF is -55°C to 175°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 100V, depending on the application.

  • The maximum continuous drain current (Id) rating for the IRF9510PBF is 19A, and the maximum pulsed drain current rating is 57A.

  • To protect the IRF9510PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.

  • To minimize parasitic inductance and ensure optimal performance, use a compact PCB layout with short, wide traces, and place the device close to the power source and load.

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