Part Details for IRF840STRLPBF by Vishay Siliconix
Results Overview of IRF840STRLPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840STRLPBF Information
IRF840STRLPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF840STRLPBFCT-ND
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DigiKey | MOSFET N-CH 500V 8A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
966 In Stock |
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$1.1500 / $2.2200 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 800 | 2400 |
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$0.8990 | Buy Now |
Part Details for IRF840STRLPBF
IRF840STRLPBF CAD Models
IRF840STRLPBF Part Data Attributes
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IRF840STRLPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF840STRLPBF
Vishay Siliconix
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840STRLPBF
This table gives cross-reference parts and alternative options found for IRF840STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF840S | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | IRF840STRLPBF vs IRF840S |
| IRF840STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF840STRLPBF vs IRF840STRR |
| IRF840S | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF840STRLPBF vs IRF840S |
| IRF840S | Motorola Mobility LLC | Check for Price | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF840STRLPBF vs IRF840S |
| IRF840STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF840STRLPBF vs IRF840STRLPBF |
IRF840STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF840STRLPBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRF840STRLPBF is 500V.
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Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.
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The recommended gate drive voltage for the IRF840STRLPBF is 10V to 15V.