Part Details for IRF840LCSPBF by Vishay Intertechnologies
Results Overview of IRF840LCSPBF by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840LCSPBF Information
IRF840LCSPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840LCSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRF840LCSPBF
|
Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRF840LCSPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
844-IRF840LCSPBF
|
Mouser Electronics | MOSFETs TO263 500V 8A N-CH MOSFET RoHS: Compliant | 245 |
|
$1.5100 / $3.2700 | Buy Now |
|
DISTI #
IRF840LCSPBF
|
TME | Transistor: N-MOSFET, unipolar, 500V, 8A, Idm: 28A, 125W Min Qty: 1 | 0 |
|
$1.0700 / $1.6000 | RFQ |
|
DISTI #
IRF840LCSPBF
|
EBV Elektronik | MOSFET NCHANNEL 500V (Alt: IRF840LCSPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 25 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IRF840LCSPBF
IRF840LCSPBF CAD Models
IRF840LCSPBF Part Data Attributes
|
|
IRF840LCSPBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRF840LCSPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840LCSPBF
This table gives cross-reference parts and alternative options found for IRF840LCSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840LCSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF840LCSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF840LCSPBF vs IRF840LCSPBF |
IRF840LCSPBF Frequently Asked Questions (FAQ)
-
The thermal resistance of the IRF840LCSPBF is typically around 3.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
-
Yes, the IRF840LCSPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and layout parasitics to ensure reliable operation.
-
To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value (150°C).
-
The recommended gate drive voltage for the IRF840LCSPBF is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and required switching performance.
-
Yes, the IRF840LCSPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.