Part Details for IRF840LC by Vishay Siliconix
Results Overview of IRF840LC by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF840LC Information
IRF840LC by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840LC
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF840LC-ND
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DigiKey | MOSFET N-CH 500V 8A TO220AB Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now |
Part Details for IRF840LC
IRF840LC CAD Models
IRF840LC Part Data Attributes
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IRF840LC
Vishay Siliconix
Buy Now
Datasheet
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IRF840LC
Vishay Siliconix
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840LC
This table gives cross-reference parts and alternative options found for IRF840LC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840LC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF840LCPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF840LC vs IRF840LCPBF |
| IRF840LC | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF840LC vs IRF840LC |
IRF840LC Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF840LC is not explicitly stated in the datasheet, but it can be determined by consulting the Vishay Siliconix application note AN1035, which provides SOA curves for the device.
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The junction-to-case thermal resistance (RθJC) for the IRF840LC can be calculated using the thermal resistance values provided in the datasheet and the device's package dimensions. A detailed calculation is provided in the Vishay Siliconix application note AN1040.
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The recommended gate drive voltage for the IRF840LC is typically between 10V and 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
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Yes, the IRF840LC is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and power losses should be carefully evaluated using simulation tools or experimental measurements to ensure reliable operation.
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The IRF840LC is a sensitive device and requires proper handling and protection from electrostatic discharge (ESD). Vishay Siliconix recommends following standard ESD precautions, such as using anti-static wrist straps, mats, and packaging materials, and ensuring that the device is properly grounded during handling and assembly.