Part Details for IRF840BPBF by Vishay Siliconix
Results Overview of IRF840BPBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840BPBF Information
IRF840BPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840BPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF840BPBF-ND
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DigiKey | MOSFET N-CH 500V 8.7A TO220AB Min Qty: 1 Lead time: 14 Weeks Container: Tube |
4807 In Stock |
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$0.6104 / $2.0900 | Buy Now |
Part Details for IRF840BPBF
IRF840BPBF CAD Models
IRF840BPBF Part Data Attributes
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IRF840BPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF840BPBF
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 56 ns | |
| Turn-on Time-Max (ton) | 58 ns |
Alternate Parts for IRF840BPBF
This table gives cross-reference parts and alternative options found for IRF840BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FMP08N50E | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF840BPBF vs FMP08N50E |
| UF840-TA3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF840BPBF vs UF840-TA3-T |
| UF840G-TQ2-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | IRF840BPBF vs UF840G-TQ2-T |
| IRF840SU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 | IRF840BPBF vs IRF840SU |
| SFF440M | Solid State Devices Inc (SSDI) | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | IRF840BPBF vs SFF440M |
| SFF440Z | Solid State Devices Inc (SSDI) | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | IRF840BPBF vs SFF440Z |
| PJP840 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | IRF840BPBF vs PJP840 |
| SFF440-28 | Solid State Devices Inc (SSDI) | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 | IRF840BPBF vs SFF440-28 |
| STB9NK50Z | STMicroelectronics | Check for Price | 7.2A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | IRF840BPBF vs STB9NK50Z |
| UF840G-TA3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | IRF840BPBF vs UF840G-TA3-T |
IRF840BPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF840BPBF is -55°C to 175°C.
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Yes, the IRF840BPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF840BPBF is 8A.
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Yes, the IRF840BPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum voltage rating for the IRF840BPBF is 500V.