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Transistors / Power Field-Effect Transistors / IRF840BPBF
Datasheets
IRF840BPBF by:

Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for IRF840BPBF by Vishay Intertechnologies

Results Overview of IRF840BPBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF840BPBF Information

IRF840BPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF840BPBF

Part # Distributor Description Stock Price Buy
DISTI # 01AC4890
Newark Mosfet, N-Ch, 500V, 8.7A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay IRF840BPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 4
  • 1 $1.3300
  • 10 $1.0300
  • 25 $0.9400
  • 50 $0.8540
  • 100 $0.7540
  • 500 $0.6610
  • 1,000 $0.5680
  • 2,500 $0.5240
$0.5240 / $1.3300 Buy Now
DISTI # IRF840BPBF
Avnet Americas N-CHANNEL 500V - Rail/Tube (Alt: IRF840BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5580
  • 2,000 $0.5491
  • 4,000 $0.5401
  • 6,000 $0.5312
  • 8,000 $0.5250
$0.5250 / $0.5580 Buy Now
DISTI # 01AC4890
Avnet Americas N-CHANNEL 500V - Bulk (Alt: 01AC4890) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk 0
  • 1 $1.3300
  • 10 $1.0300
  • 25 $0.9400
  • 50 $0.8540
  • 100 $0.7540
$0.7540 / $1.3300 Buy Now
DISTI # V99:2348_09218653
Arrow Electronics Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2238 Americas - 65
  • 1 $0.8885
  • 10 $0.7848
  • 25 $0.7566
  • 50 $0.6706
  • 100 $0.6580
  • 500 $0.5978
  • 1,000 $0.5270
  • 2,500 $0.5140
$0.5140 / $0.8885 Buy Now
DISTI # 64974015
Verical Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 11 Package Multiple: 1 Date Code: 2238 Americas - 65
  • 11 $0.8885
$0.8885 Buy Now
DISTI # IRF840BPBF
TTI MOSFETs 500V 850mOhm@10V 8.7A N-Ch D-SRS RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 500
In Stock
  • 50 $0.7360
$0.7360 Buy Now
DISTI # IRF840BPBF
TME Transistor: N-MOSFET, unipolar, 500V, 8.7A, Idm: 18A, 156W, TO220AB Min Qty: 1 0
  • 1 $1.0100
  • 10 $0.9000
  • 50 $0.8000
  • 250 $0.7200
  • 1,000 $0.6700
$0.6700 / $1.0100 RFQ
DISTI # IRF840BPBF
EBV Elektronik NCHANNEL 500V (Alt: IRF840BPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 950
Buy Now
Vyrian Transistors 1848
RFQ

Part Details for IRF840BPBF

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IRF840BPBF Part Data Attributes

Parametric Data
IRF840BPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF840BPBF Vishay Intertechnologies Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 56 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 58 ns

Alternate Parts for IRF840BPBF

This table gives cross-reference parts and alternative options found for IRF840BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF840AJ69Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF840BPBF vs IRF840AJ69Z
PJU8NA50_T0_00001 PanJit Semiconductor Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IRF840BPBF vs PJU8NA50_T0_00001
SFF440C Solid State Devices Inc (SSDI) Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254C, 3 PIN IRF840BPBF vs SFF440C
STB8NC50T4 STMicroelectronics Check for Price 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 IRF840BPBF vs STB8NC50T4
IRF840B_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN IRF840BPBF vs IRF840B_NL
IRF840SU Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 IRF840BPBF vs IRF840SU
SIHP8N50D-E3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 IRF840BPBF vs SIHP8N50D-E3
SIHB8N50D-GE3 Vishay Intertechnologies $0.8635 Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 IRF840BPBF vs SIHB8N50D-GE3
SFF440M Solid State Devices Inc (SSDI) Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN IRF840BPBF vs SFF440M
SFF440-28 Solid State Devices Inc (SSDI) Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 IRF840BPBF vs SFF440-28

IRF840BPBF Related Parts

IRF840BPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF840BPBF is -55°C to 175°C.

  • Yes, the IRF840BPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRF840BPBF is 8A.

  • Yes, the IRF840BPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The maximum voltage rating for the IRF840BPBF is 500V.

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