Part Details for IRF840ASPBF by Vishay Siliconix
Results Overview of IRF840ASPBF by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840ASPBF Information
IRF840ASPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840ASPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF840ASPBF-ND
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DigiKey | MOSFET N-CH 500V 8A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube |
693 In Stock |
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$1.3988 / $1.9000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 500V, 0.85OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 48 |
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$1.2000 / $1.5000 | Buy Now |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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New Advantage Corporation | Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 2250 |
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$1.5800 / $1.7200 | Buy Now |
Part Details for IRF840ASPBF
IRF840ASPBF CAD Models
IRF840ASPBF Part Data Attributes
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IRF840ASPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF840ASPBF
Vishay Siliconix
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840ASPBF
This table gives cross-reference parts and alternative options found for IRF840ASPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840ASPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF840ASTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRF840ASPBF vs IRF840ASTRR |
| IRF840ASTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRF840ASPBF vs IRF840ASTRL |
| SIHF840ASTR | Vishay Siliconix | Check for Price | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power | IRF840ASPBF vs SIHF840ASTR |
IRF840ASPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF840ASPBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended operating range.
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The recommended gate resistor value for the IRF840ASPBF is typically between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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To protect the IRF840ASPBF from overvoltage and overcurrent, consider using a voltage regulator, overvoltage protection (OVP) circuit, and/or a current sense resistor to monitor and limit the current.
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The maximum allowable power dissipation for the IRF840ASPBF is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.