-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840APBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38K2859
|
Newark | Mosfet Transistor, N Channel, 8 A, 500 V, 850 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRF840APBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 362 |
|
$0.9330 / $1.7700 | Buy Now |
DISTI #
IRF840APBF
|
Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRF840APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 1000 |
|
$1.1400 / $1.2112 | Buy Now |
DISTI #
844-IRF840APBF
|
Mouser Electronics | MOSFETs TO220 500V 8A N-CH MOSFET RoHS: Compliant | 3062 |
|
$1.1800 / $2.1400 | Buy Now |
DISTI #
70078867
|
RS | MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.85Ohm, ID 8A, TO-220AB, PD 125W, VGS +/-30V Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 880 |
|
$1.0700 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.6450 / $0.7150 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.6450 / $0.7150 | Buy Now |
DISTI #
IRF840APBF
|
TTI | MOSFETs TO220 500V 8A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 550 In Stock |
|
$0.8700 / $1.0800 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 O 38 nC Flange Mount Power Mosfet - TO-220-3 Min Qty: 50 Package Multiple: 50 |
1000 null |
|
$0.6550 / $0.7250 | Buy Now |
DISTI #
IRF840APBF
|
TME | Transistor: N-MOSFET, unipolar, 500V, 5.1A, Idm: 32A, 125W, TO220AB Min Qty: 1 | 352 |
|
$0.8700 / $1.7900 | Buy Now |
DISTI #
SMC-IRF840APBF
|
Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1000 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF840APBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRF840APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRF840APBF is -55°C to 175°C.
Yes, the IRF840APBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The maximum current rating for the IRF840APBF is 23A.
Yes, the IRF840APBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The typical gate threshold voltage for the IRF840APBF is 2-4V.