Part Details for IRF840 by Vishay Siliconix
Results Overview of IRF840 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840 Information
IRF840 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15 |
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RFQ |
Part Details for IRF840
IRF840 CAD Models
IRF840 Part Data Attributes
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IRF840
Vishay Siliconix
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Datasheet
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IRF840
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840
This table gives cross-reference parts and alternative options found for IRF840. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF840 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF840 vs IRF840 |
IRF840 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF840 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10V and 10A.
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To ensure the IRF840 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide a current of at least 1A. Additionally, the gate resistor should be as low as possible to minimize the turn-on time.
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The maximum frequency of operation for the IRF840 is not explicitly stated in the datasheet, but it is typically limited by the device's switching characteristics and the application's requirements. As a general rule, the IRF840 can operate up to several hundred kHz, but the actual frequency limit will depend on the specific application and circuit design.
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To protect the IRF840 from overvoltage and overcurrent, a voltage clamp or a zener diode can be used to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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The thermal resistance of the IRF840 is typically around 62°C/W for the junction-to-case thermal resistance (RθJC) and around 125°C/W for the junction-to-ambient thermal resistance (RθJA). These values can be used to estimate the device's junction temperature and ensure safe operation.