Part Details for IRF830PBF by Vishay Siliconix
Results Overview of IRF830PBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830PBF Information
IRF830PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830PBF-ND
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DigiKey | MOSFET N-CH 500V 4.5A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
5768 In Stock |
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$0.7125 / $1.3700 | Buy Now |
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DISTI #
70459412
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RS | MOSFET N-CH 500V 4.5A TO-220AB Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$1.1200 / $1.3200 | RFQ |
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New Advantage Corporation | Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 9350 |
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$0.8231 / $0.8917 | Buy Now |
Part Details for IRF830PBF
IRF830PBF CAD Models
IRF830PBF Part Data Attributes
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IRF830PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF830PBF
Vishay Siliconix
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830PBF
This table gives cross-reference parts and alternative options found for IRF830PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF830PBF vs IRF830 |
| IRF830 | Motorola Mobility LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF830PBF vs IRF830 |
| IRF830 | STMicroelectronics | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF830PBF vs IRF830 |
| IRF830 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF830PBF vs IRF830 |
| IRF830 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF830PBF vs IRF830 |
IRF830PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF830PBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 30V to 100V.
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The recommended gate resistor value for the IRF830PBF is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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To protect the IRF830PBF from overvoltage and overcurrent, use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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The maximum allowable power dissipation for the IRF830PBF is 125W at a case temperature of 25°C, but this value decreases as the temperature increases.