Part Details for IRF830BPBF by Vishay Intertechnologies
Results Overview of IRF830BPBF by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830BPBF Information
IRF830BPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830BPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
99W8855
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Newark | Mosfet, N-Ch, 500V, 5.3A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Vishay IRF830BPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 56 |
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$0.4880 / $1.1900 | Buy Now |
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DISTI #
IRF830BPBF
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Avnet Americas | N-CHANNEL 500V - Tape and Reel (Alt: IRF830BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.3799 / $0.4037 | Buy Now |
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DISTI #
99W8855
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Avnet Americas | N-CHANNEL 500V - Bulk (Alt: 99W8855) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$0.5130 / $0.6400 | Buy Now |
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DISTI #
V99:2348_09218651
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Arrow Electronics | Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2139 | Americas - 952 |
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$0.3911 / $0.3960 | Buy Now |
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DISTI #
80928151
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Verical | Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 15 Package Multiple: 1 Date Code: 2139 | Americas - 952 |
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$0.3960 | Buy Now |
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DISTI #
IRF830BPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5.3A, Idm: 10A, 104W, TO220AB Min Qty: 1 | 0 |
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$0.5340 / $0.8010 | RFQ |
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DISTI #
IRF830BPBF
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EBV Elektronik | NCHANNEL 500V (Alt: IRF830BPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 614 |
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RFQ |
Part Details for IRF830BPBF
IRF830BPBF CAD Models
IRF830BPBF Part Data Attributes
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IRF830BPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830BPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 28.8 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 50 ns | |
| Turn-on Time-Max (ton) | 46 ns |
Alternate Parts for IRF830BPBF
This table gives cross-reference parts and alternative options found for IRF830BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7290H3 | Intersil Corporation | Check for Price | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | IRF830BPBF vs 2N7290H3 |
| FMP05N50E | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF830BPBF vs FMP05N50E |
| 2N7290D1 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRF830BPBF vs 2N7290D1 |
| FQP6N50J69Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF830BPBF vs FQP6N50J69Z |
| 2N7290H3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRF830BPBF vs 2N7290H3 |
| 2N7290R4 | Intersil Corporation | Check for Price | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | IRF830BPBF vs 2N7290R4 |
| IRF830BPBF | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IRF830BPBF vs IRF830BPBF |
| 2N7290H1 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRF830BPBF vs 2N7290H1 |
| 2N7290D3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRF830BPBF vs 2N7290D3 |
| 2N7290H4 | Intersil Corporation | Check for Price | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | IRF830BPBF vs 2N7290H4 |
IRF830BPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF830BPBF is -55°C to 175°C.
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Yes, the IRF830BPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF830BPBF is 12A.
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Yes, the IRF830BPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The IRF830BPBF comes in a TO-220AB package.