Datasheets
IRF830BPBF-BE3 by:

Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for IRF830BPBF-BE3 by Vishay Intertechnologies

Results Overview of IRF830BPBF-BE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRF830BPBF-BE3 Information

IRF830BPBF-BE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF830BPBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 06AJ9164
Newark N-Channel 500V |Vishay IRF830BPBF-BE3 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRF830BPBF-BE3
Avnet Americas N-CHANNEL 500V - Tape and Reel (Alt: IRF830BPBF-BE3) Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # IRF830BPBF-BE3
TTI MOSFETs TO220 500V 5.3A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 2000
In Stock
  • 50 $0.5270
$0.5270 Buy Now

Part Details for IRF830BPBF-BE3

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IRF830BPBF-BE3 Part Data Attributes

IRF830BPBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF830BPBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 28.8 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 46 ns

IRF830BPBF-BE3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF830BPBF-BE3 is -55°C to 175°C.

  • The IRF830BPBF-BE3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRF830BPBF-BE3 is 12 A, but this is dependent on the operating conditions and heat sink used.

  • Yes, the IRF830BPBF-BE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The maximum voltage rating for the IRF830BPBF-BE3 is 500 V, making it suitable for high-voltage applications.

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