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Part Details for IRF830ASPBF by Vishay Intertechnologies
Results Overview of IRF830ASPBF by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830ASPBF Information
IRF830ASPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830ASPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
56AJ9919
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Newark | Mosfet, N-Ch, 500V, 5A, To-263 Rohs Compliant: Yes |Vishay IRF830ASPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 204 |
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$1.2400 / $2.9500 | Buy Now |
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DISTI #
IRF830ASPBF
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Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
844-IRF830ASPBF
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Mouser Electronics | MOSFETs TO263 500V 5A N-CH MOSFET RoHS: Compliant | 617 |
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$0.9610 / $2.2500 | Buy Now |
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DISTI #
87902577
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Verical | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK Min Qty: 500 Package Multiple: 500 | Americas - 500 |
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$2.0750 / $2.1772 | Buy Now |
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DISTI #
IRF830ASPBF
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TTI | MOSFETs TO263 500V 5A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.9000 / $0.9200 | Buy Now |
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DISTI #
IRF830ASPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5A, Idm: 20A, 74W, D2PAK,TO263 Min Qty: 1 | 0 |
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$0.6700 / $1.1000 | RFQ |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
IRF830ASPBF
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IBS Electronics | SINGLE N-CHANNEL 500 V 1.4 OHMS SURFACE MOUNT POWER MOSFET - D2PAK-3 Min Qty: 1000 Package Multiple: 1 | 0 |
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$1.2155 / $1.3520 | Buy Now |
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DISTI #
IRF830ASPBF
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EBV Elektronik | MOSFET NCHANNEL 500V (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF830ASPBF
IRF830ASPBF CAD Models
IRF830ASPBF Part Data Attributes
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IRF830ASPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830ASPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830ASPBF
This table gives cross-reference parts and alternative options found for IRF830ASPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830ASPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830ASTRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | IRF830ASPBF vs IRF830ASTRLPBF |
IRF830ASPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF830ASPBF is -55°C to 175°C.
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Yes, the IRF830ASPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF830ASPBF is 12A.
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Yes, the IRF830ASPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The IRF830ASPBF comes in a TO-220AB package.