Part Details for IRF830A by Vishay Siliconix
Results Overview of IRF830A by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830A Information
IRF830A by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830A-ND
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DigiKey | MOSFET N-CH 500V 5A TO220AB Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRF830A
IRF830A CAD Models
IRF830A Part Data Attributes
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IRF830A
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF830A
Vishay Siliconix
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830A
This table gives cross-reference parts and alternative options found for IRF830A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830A | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF830A vs IRF830A |
IRF830A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF830A is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the application notes or by contacting Vishay Siliconix directly. Generally, the SOA is limited by the maximum voltage and current ratings, as well as the thermal characteristics of the device.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be operated within its recommended temperature range.
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The recommended gate drive voltage for the IRF830A is typically between 10V to 15V, depending on the specific application and the desired level of performance. However, the datasheet recommends a minimum gate drive voltage of 4V to ensure proper turn-on and turn-off of the device.
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Yes, the IRF830A can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF830A has a relatively low gate charge, which makes it suitable for high-frequency switching applications. However, the device's switching performance may degrade at very high frequencies, and additional considerations, such as layout and parasitic inductance, may be necessary.
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To protect the IRF830A from electrostatic discharge (ESD), it's essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be stored in a protective environment, and the PCB should be designed with ESD protection in mind, such as using ESD protection diodes or resistors.