Part Details for IRF8306MTRPBF by Infineon Technologies AG
Results Overview of IRF8306MTRPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF8306MTRPBF Information
IRF8306MTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF8306MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85989771
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Verical | Trans MOSFET N-CH Si 30V 23A 7-Pin Direct-FET MX T/R RoHS: Compliant Min Qty: 202 Package Multiple: 1 Date Code: 1601 | Americas - 9600 |
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$1.8625 | Buy Now |
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Rochester Electronics | 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 9600 |
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$0.9241 / $1.4900 | Buy Now |
Part Details for IRF8306MTRPBF
IRF8306MTRPBF CAD Models
IRF8306MTRPBF Part Data Attributes
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IRF8306MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8306MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 140 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 340 pF | |
| JESD-30 Code | R-XBCC-N3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8306MTRPBF
This table gives cross-reference parts and alternative options found for IRF8306MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8306MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF8306MTR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor | IRF8306MTRPBF vs IRF8306MTR1PBF |
IRF8306MTRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF8306MTRPBF is -55°C to 175°C.
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No, the IRF8306MTRPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
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The recommended PCB footprint for the IRF8306MTRPBF is a 5x6mm pad with a 1.5mm thermal pad in the center.
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While the IRF8306MTRPBF is a high-quality device, it is not designed for high-reliability applications such as aerospace or defense. For such applications, a more specialized device with specific certifications and testing may be required.
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The maximum allowable power dissipation for the IRF8306MTRPBF is 150W at 25°C, but this value decreases as the temperature increases.