Part Details for IRF8304MTRPBF by Infineon Technologies AG
Results Overview of IRF8304MTRPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF8304MTRPBF Information
IRF8304MTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF8304MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF8304MTRPBF-448-ND
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DigiKey | IRF8304 - 12V-300V N-CHANNEL POW Min Qty: 292 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2561 In Stock |
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$1.0300 | Buy Now |
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DISTI #
85989752
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Verical | Trans MOSFET N-CH 30V 28A 7-Pin Direct-FET MX T/R RoHS: Compliant Min Qty: 304 Package Multiple: 1 Date Code: 2201 | Americas - 5293 |
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$1.2373 | Buy Now |
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Rochester Electronics | 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 5293 |
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$0.6137 / $0.9898 | Buy Now |
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DISTI #
SP001551618
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EBV Elektronik | Trans MOSFET NCH 30V 28A 7Pin DirectFET MX TR (Alt: SP001551618) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF8304MTRPBF
IRF8304MTRPBF CAD Models
IRF8304MTRPBF Part Data Attributes
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IRF8304MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8304MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8304MTRPBF
This table gives cross-reference parts and alternative options found for IRF8304MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8304MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF8304MPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | IRF8304MTRPBF vs IRF8304MPBF |
IRF8304MTRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF8304MTRPBF is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF8304MTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF8304MTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
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The maximum allowable power dissipation for the IRF8304MTRPBF is 150W, but this value can be derated based on the operating temperature and other factors.