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Part Details for IRF8301MTRPBF by Infineon Technologies AG
Results Overview of IRF8301MTRPBF by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF8301MTRPBF Information
IRF8301MTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF8301MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2579997
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Farnell | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 4054 |
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$1.6208 / $2.8297 | Buy Now |
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DISTI #
2579997RL
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Farnell | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 500 Lead time: 51 Weeks, 1 Days Container: Reel | 4054 |
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$1.6208 / $1.6473 | Buy Now |
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DISTI #
85995834
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Verical | Trans MOSFET N-CH Si 30V 34A 7-Pin Direct-FET MT T/R Min Qty: 197 Package Multiple: 1 Date Code: 2201 | Americas - 2126 |
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$1.9125 | Buy Now |
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Rochester Electronics | IRF8301 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 2126 |
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$0.9497 / $1.5300 | Buy Now |
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DISTI #
IRF8301MTRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 192A, 89W, DirectFET Min Qty: 4800 | 0 |
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$2.3000 | RFQ |
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Cytech Systems Limited | MOSFET N-CH 30V 34A DIRECTFET | 14400 |
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RFQ | |
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DISTI #
SP001555752
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EBV Elektronik | Trans MOSFET NCH 30V 34A 7Pin DirectFET MT TR (Alt: SP001555752) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF8301MTRPBF
IRF8301MTRPBF CAD Models
IRF8301MTRPBF Part Data Attributes
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IRF8301MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8301MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF8301MTRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF8301MTRPBF is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF8301MTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF8301MTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
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The maximum allowable power dissipation for the IRF8301MTRPBF is 150W, but this can be increased with proper heat sinking and thermal management.