-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRF830 by STMicroelectronics
Results Overview of IRF830 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830 Information
IRF830 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | Min Qty: 3 | 99 |
|
$1.0969 / $1.7550 | Buy Now |
|
|
Bristol Electronics | 17 |
|
RFQ | ||
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 79 |
|
$0.8775 / $2.3400 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 13 |
|
$1.5300 / $2.0400 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 7 |
|
$0.6000 / $0.7200 | Buy Now |
Part Details for IRF830
IRF830 CAD Models
IRF830 Part Data Attributes
|
|
IRF830
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
IRF830
STMicroelectronics
4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | HIGH VOLTAGE, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 205 ns | |
| Turn-on Time-Max (ton) | 102 ns |
Alternate Parts for IRF830
This table gives cross-reference parts and alternative options found for IRF830. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF830 vs IRF830 |
| IRF830 | Motorola Mobility LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF830 vs IRF830 |
| IRF830PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF830 vs IRF830PBF |
| IRF830 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF830 vs IRF830 |
| IRF830 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF830 vs IRF830 |
IRF830 Frequently Asked Questions (FAQ)
-
The maximum SOA for the IRF830 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A safe operating area curve can be obtained from the manufacturer or through simulation and testing.
-
To ensure the IRF830 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and for turn-off, ensure Vgs is less than the threshold voltage (Vth) of around 2-3V. Also, consider using a gate driver or a dedicated IC to ensure proper switching.
-
The maximum Tj for the IRF830 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
-
Yes, the IRF830 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure proper layout and decoupling to minimize ringing and electromagnetic interference (EMI).
-
Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRF830 from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.