Part Details for IRF830 by International Rectifier
Results Overview of IRF830 by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
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IRF830 Information
IRF830 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 486 |
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Bristol Electronics | 80 |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 3803 |
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$0.2640 / $0.7200 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 1554 |
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$0.4400 / $1.1000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 47 |
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$1.1700 / $1.9500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | 40 |
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$0.7200 / $1.2000 | Buy Now |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
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Part Details for IRF830
IRF830 CAD Models
IRF830 Part Data Attributes
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IRF830
International Rectifier
Buy Now
Datasheet
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IRF830
International Rectifier
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 74 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830
This table gives cross-reference parts and alternative options found for IRF830. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF830 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF830 vs IRF830 |
| IRF830 | Motorola Mobility LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF830 vs IRF830 |
| IRF830PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF830 vs IRF830PBF |
| IRF830 | STMicroelectronics | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF830 vs IRF830 |
| IRF830 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF830 vs IRF830 |
| IRF830 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF830 vs IRF830 |
IRF830 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF830 is typically defined by the voltage and current ratings. The device can handle up to 500V and 4.5A, but the actual SOA will depend on the specific application and operating conditions.
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To ensure the IRF830 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be able to provide sufficient current to charge the gate capacitance quickly.
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The thermal resistance of the IRF830 is typically around 62°C/W (junction-to-case) and 125°C/W (junction-to-ambient) when mounted on a standard PCB with minimal thermal interface material.
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Yes, the IRF830 can be used in high-frequency switching applications, but the gate drive circuit and layout should be optimized to minimize ringing and ensure proper switching. The device's switching characteristics, such as rise and fall times, should also be considered.
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To protect the IRF830 from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes, and a current sense resistor or fuse to detect and respond to overcurrent conditions.