-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF820APBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
8648506
|
Farnell | MOSFET, N, 500V, 2.5A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Each | 299 |
|
$0.7058 / $2.0696 | Buy Now |
DISTI #
IRF820APBF
|
Avnet Americas | Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole - Bulk (Alt: IRF820APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$0.6588 / $0.7000 | Buy Now |
DISTI #
844-IRF820APBF
|
Mouser Electronics | MOSFETs TO220 500V 2.5A N-CH MOSFET RoHS: Compliant | 1866 |
|
$0.7000 / $1.6200 | Buy Now |
DISTI #
E02:0323_00194041
|
Arrow Electronics | Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2349 | Europe - 929 |
|
$0.5800 / $0.6999 | Buy Now |
DISTI #
IRF820APBF
|
TTI | MOSFETs TO220 500V 2.5A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 5 Package Multiple: 5 Container: Tube |
Americas - 1965 In Stock |
|
$0.6800 / $1.0600 | Buy Now |
DISTI #
IRF820APBF
|
TME | Transistor: N-MOSFET, unipolar, 500V, 1.6A, 50W, TO220AB Min Qty: 1 | 936 |
|
$0.4830 / $0.7260 | Buy Now |
DISTI #
IRF820APBF
|
IBS Electronics | SINGLE N-CHANNEL 500 V 3 OHM HEXFET POWER MOSFET - TO-220AB Min Qty: 1000 Package Multiple: 1 | 0 |
|
$1.0530 / $1.0985 | Buy Now |
DISTI #
IRF820APBF
|
EBV Elektronik | Power MOSFET N Channel 500 V 25 A 3 ohm TO220AB Through Hole (Alt: IRF820APBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
LCSC | 500V 2.5A 310V1.5A 50W 4.5V 1 N-channel TO-220AB-3 MOSFETs ROHS | 3 |
|
$1.0486 / $1.1089 | Buy Now |
|
Vyrian | Transistors | 797 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF820APBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRF820APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.7 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRF820APBF is -55°C to 175°C.
No, the IRF820APBF is a standard MOSFET and requires a higher gate-source voltage to turn on.
The maximum current rating for the IRF820APBF is 12A.
Yes, the IRF820APBF has a low gate charge and a fast switching time, making it suitable for high-frequency switching applications.
The maximum voltage rating for the IRF820APBF is 500V.