Part Details for IRF8010SPBF by International Rectifier
Results Overview of IRF8010SPBF by International Rectifier
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF8010SPBF Information
IRF8010SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF8010SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 115 |
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Bristol Electronics | 16 |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 302 |
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$3.3000 / $6.0000 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 296 |
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$3.8448 / $6.9906 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 92 |
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$2.9138 / $4.7250 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 12 |
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$2.4500 / $3.9200 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 11 |
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$3.4650 / $4.7250 | Buy Now |
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ComSIT USA | SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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Part Details for IRF8010SPBF
IRF8010SPBF CAD Models
IRF8010SPBF Part Data Attributes
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IRF8010SPBF
International Rectifier
Buy Now
Datasheet
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IRF8010SPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8010SPBF
This table gives cross-reference parts and alternative options found for IRF8010SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8010SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF8010S | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF8010SPBF vs IRF8010S |
IRF8010SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF8010SPBF is -55°C to 175°C.
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Yes, the IRF8010SPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF8010SPBF is 30A.
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Yes, the IRF8010SPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The typical gate threshold voltage for the IRF8010SPBF is around 2.5V to 4.5V.