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Part Details for IRF7854TRPBF by Infineon Technologies AG
Results Overview of IRF7854TRPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF7854TRPBF Information
IRF7854TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7854TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9209
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Newark | Mosfet, N-Ch, 80V, 10A, 150Deg C, 2.5W, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.9V Rohs Compliant: Yes |Infineon IRF7854TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2089 |
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$0.7880 / $1.8400 | Buy Now |
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DISTI #
86AK5388
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Newark | Mosfet, N-Ch, 80V, 10A, Soic Rohs Compliant: Yes |Infineon IRF7854TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6740 | Buy Now |
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DISTI #
IRF7854TRPBFCT-ND
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DigiKey | MOSFET N-CH 80V 10A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
16381 In Stock |
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$0.6223 / $1.1300 | Buy Now |
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DISTI #
IRF7854TRPBF
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Avnet Americas | Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7854TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel | 4000 |
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$0.4977 | Buy Now |
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DISTI #
942-IRF7854TRPBF
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Mouser Electronics | MOSFETs MOSFT 80V 10A 13.4mOhm 27nC Qg RoHS: Compliant | 5311 |
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$0.6030 / $0.9700 | Buy Now |
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DISTI #
V72:2272_13890529
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Arrow Electronics | Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2309 Container: Cut Strips | Americas - 2582 |
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$0.4984 / $0.6957 | Buy Now |
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Future Electronics | Single N-Channel 80 V 13.4 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 8000Reel |
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$0.5400 | Buy Now |
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Future Electronics | Single N-Channel 80 V 13.4 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.5400 | Buy Now |
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DISTI #
69265584
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Verical | Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 46 Package Multiple: 1 Date Code: 2323 | Americas - 4143 |
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$0.5650 / $0.8610 | Buy Now |
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DISTI #
67369413
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Verical | Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 12 Package Multiple: 1 Date Code: 2309 | Americas - 2582 |
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$0.4984 / $0.6303 | Buy Now |
Part Details for IRF7854TRPBF
IRF7854TRPBF CAD Models
IRF7854TRPBF Part Data Attributes
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IRF7854TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7854TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0134 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 79 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7854TRPBF
This table gives cross-reference parts and alternative options found for IRF7854TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7854TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7854PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | IRF7854TRPBF vs IRF7854PBF |
| IRF7853PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7854TRPBF vs IRF7853PBF |
IRF7854TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7854TRPBF is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF7854TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF7854TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
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The maximum allowable power dissipation for the IRF7854TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.