Part Details for IRF7853TRPBF by International Rectifier
Results Overview of IRF7853TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
IRF7853TRPBF Information
IRF7853TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7853TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2038 |
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RFQ | ||
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Velocity Electronics | Our Stock | 55 |
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RFQ | |
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Velocity Electronics | Our Stock | 20 |
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RFQ | |
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Vyrian | Transistors | 8173 |
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RFQ |
Part Details for IRF7853TRPBF
IRF7853TRPBF CAD Models
IRF7853TRPBF Part Data Attributes
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IRF7853TRPBF
International Rectifier
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Datasheet
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IRF7853TRPBF
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SO-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.3 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF7853TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7853TRPBF is -55°C to 175°C.
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The IRF7853TRPBF is a logic-level MOSFET, which means it can be driven by a logic signal (typically 5V) and does not require a high voltage to turn on.
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The maximum current rating for the IRF7853TRPBF is 195A, but this is dependent on the operating conditions and the device must be properly heatsinked to achieve this rating.
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Yes, the IRF7853TRPBF is a Pb-free (RoHS compliant) device, making it suitable for use in applications that require compliance with environmental regulations.
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The typical turn-on time (td(on)) for the IRF7853TRPBF is around 10ns, and the typical turn-off time (td(off)) is around 20ns, but these values can vary depending on the operating conditions and the gate drive circuitry.